Backside Absolute Pressure Sensor Die

The NovaSensor P1905 Backside Absolute Pressure Sensor Die is a piezoresistive sensor die designed for absolute pressure measurements in aggressive (harsh) media. The die has a reference vacuum chamber formed by hermetic low-stress bonding of silicon cap to the top side of device wafer. By applying pressure from backside of the die, P1905 sensor die eliminates the direct contact of sensor circuitry on top side with the applied media, which allows the P1905 die to measure pressure in aggressive liquids and gases. With NovaSensor’s SenStable® process, P1905 die features excellent long-term stability and repeatability (< 0.1% / year typ.).

Applications

Automotive systems
Process control systems
Aerospace
Pressure measurements in aggressive media

Features

Harsh media compatible
Highly reliable, solid state silicon absolute pressure sensor die pressurized from cavity side
Recommended pressure ranges:
0…100 PSIA to 0…300 PSIA
Die dimensions (L x W x H):
1.93 mm x 1.93 mm x 1.64 mm
Bond pads all on same side for easy application packaging
Other pressure ranges available

Specifications

Parameter	Value	Units	Notes
All values measured at 25ºC and 5 V excitation, unless otherwise noted. Samples from each wafer are used to verify bridge resistance, offset, span, linearity and die performance in the temperature range between 0ºC and 70ºC. Backside burst pressure and operating temperature for sensor utilizing P1905 die can be lower than corresponding parameters for the die. Typical span is equal to 160 mV at 300 psi. Best fit straight line. Between 0ºC and 70ºC. Typical value.
General
Pressure Range	0...100 to 0...300	PSIA
Max. Overpressure	600	PSIA
Backside Burst Pressure	>4000	PSI	6
Electrical @ 25°C Unless Noted
Excitation (DC)	1 5	mA Volt	10VDC Max.
Bridge Resistance	5000 ± 20%	Ω
Environmental
Temperature Range
Operating	-40° to 150°	°C	2
Storage	-55° to 160°	°C
Mechanical
Performance Parameters (1)
	Value	Units	Notes
Zero Offset	± 10	mV/V
Sensitivity	0.107 ± 0.030	mV/V/psi	3
Pressure Linearity	± 0.2	% Span	4
Pressure Hysteresis	± 10	μV/V	5, 6
Temp. Coefficient of Zero	0.5 ± 3	μV/V/C	5, 6
Temp. Coefficient of Resistance	0.27	%/C	5, 6
Temp. Coefficient of Sensitivity	-0.19	%/C	5, 6
Thermal Hysteresis of Zero	± 25	μV/V	5, 6