| Parameter (Note 1,2) | Unit | Value | Comment |
|---|---|---|---|
| Pressure Range | mmHg | 450 to 1050 | Absolute pressure |
| Proof Pressure3 | mmHg | 2700 | |
| Burst Pressure4 | mmHg | 4500 | |
| Excitation | Volts | 1 to 6 | DC Voltage |
| Bridge Resistance5 | kohm | 3.2±1.0 | |
| Symmetry6 | % | ±5 | |
| Offset Voltage7 | mV/V | 4.5 | Typical @ 750 mmHg |
| Sensitivity7 | μV/V/mmHg | 10 | Typical |
| Pressure Non Linearity7 | % | ±1 | Typical TBNL, 300 mmHg Range |
| TC Offset7 | μV/V/°C | ±40 | Maximum |
| TC Sensitivity7 | %/°C | -0.2 | Typical |
| TC Resistance7 | %/°C | 0.05 | Typical |
| Operating Temperature8 | °C | 15 to 45 | 59 to 113°F |
| Storage Temperature | °C | -25 to 70 | -13 to 158°F |
| Media Compatibility 9, 10 |
Clean, dry and non-corrosive gases |
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Notes
- Values measured at 22°C (72°F) unless noted with 3000 ohm resistors completing the bridge.
- Pressure sensor performance can be affected by die mounting. Packaging stress should be minimized to achieve the specified performance.
- Proof Pressure: The maximum pressure at which the sensor may be subjected as an uncommon event and for a short duration of time without permanent damage or performance degradation. If the Proof Pressure is exceeded, the die performance is no longer guaranteed.
- Burst Pressure: The pressure at which permanent damage to the sensor may occur. Specification is for quasi-static pressure in an oil medium applied to the diaphragm side of the die.
- Parameter is measured at the wafer-level 100% at room temperature, atmospheric pressure and 3V.
- Symmetry is calculated as 2*(r1 – r2)/(r1 + r2), where r1 and r2 are two piezoresistors measured separately.
- Parameters marked “Typical” are verified by testing samples from each wafer. TCR of sensor resistors only. TCR of bridge circuit will be affected by the resistor values completing the bridge.
- Die is capable beyond this range with additional validation.
- Die with protective layers has been successfully used in various medical and biological applications.
- If the sensor is to be exposed to radiation, it is recommended to shield the die from radiation and implement auto-zeroing.
